Abstract
Thin Mo films in the thickness range between 1 and 164 nm have been deposited on high-quality quartz and Corning glass substrates by Radio Frequency (RF) magnetron sputtering under high vacuum (base pressure ~ 3 × 10-7 mbar). The sputtering target was metallic Mo. Subsequent short annealing of Mo at temperatures between about 400 °C - 600 °C in a muffle furnace in air produced MoO3 thin films. Heating even to 400°C resulted in significant growth of crystal size. Surprisingly, films thinner than about 50 nm could not be heated at higher temperatures due to the evaporation of the oxide. Ultraviolet – visible light absorption spectroscopy experiments were employed for the determination of the optical band gap. The results for direct and indirect allowed transitions are discussed.
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