Abstract
ABSTRACTWe report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar arrays using selective area (SA) metalorganic vapor phase epitaxy (MOVPE) for the application of two-dimensional photonic crystals (2D-PhCs). SA-MOVPE was carried out on SiO2 masked (111)B GaAs substrates with circular or hexagonal hole openings. Extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {110} vertical facets with their diameter of order of 200 nm were obtained. Unexpectingly strong intense light emission was observed for the room temperature photoluminescence measurement, which suggests low surface nonradiative recombination and enhancement of the light extraction efficiency of the pillar arrays.
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