Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition

Abstract

SiC films were deposited on Si substrate by a plasma-enhanced chemical vapor deposition technique using a gaseous mixture of SiCl 4, CH 4, H 2 and Ar. The deposition behavior of silicon carbide films was investigated by varying the deposition temperature, RF power and input gas ratio, R x [CH 4/(CH 4+H 2)]. The plasma-enhanced chemical vapor deposition method effectively enhanced the deposition rate and crystallinity of SiC films compared with thermal chemical vapor deposition. A small amount of free silicon was co-deposited with SiC phase in this process; however, the content of free silicon was negligible on increasing the deposition temperature above 1270 °C and decreasing the R x value below 0.04. A monolithic 3C-SiC film with a hardness value of approximately 28 GPa could be obtained at a deposition temperature of 1270 °C, RF power of 60 W and an input gas ratio of 0.04.