Abstract
The growth of K on Si(100), at 150 K, has been studied in situ by helium atom scattering. The transition from a corrugated, semi-conducting surface charge density to a smooth, metallic surface is clearly visible in the data. Below one monolayer we identify a single ordered overlayer at a coverage corresponding to 0.5 ML with respect to the Si atom density. A close packed metal film develops near 1 ML and reaches maximum order at 1.25 ML. The density of the metal film is consistent with a c(4 × 2) structure with a lattice mismatch of 3.5% in the [011] direction (overlayer expansion) and 2.3% in the [01̄1] direction (overlayer compression) or vice versa. At higher coverages, the film appears to develop by island growth.
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