Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors

Abstract

The growth of corundum-structured α-In2O3, showing an X-ray diffraction (0006) rocking curve full-width at half maximum of 185 arcsec and electron Hall mobility of 130 cm2 V−1 s−1, was demonstrated on a sapphire substrate with an α-Ga2O3 buffer layer. An MOSFET of α-In2O3 exhibited pinch-off characteristics and an on–off ratio of drain current of 106. The use of mist chemical vapor deposition for the insulator-semiconductor structure was advantageous for low-cost devices.