Abstract
We present structural and magnetic characterization of Cr-doped InN films grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Low-temperature GaN buffer layers grown by metalorganic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN and sapphire. A high n-type carrier concentration of 1.5×1020cm−3 was measured in InN films with 3% Cr doping. Films of this type, with high structural perfection, as measured in situ, with reflection high-energy electron diffraction, exhibit a well-defined in-plane magnetic hysteresis loop for temperatures varying from 5to300K. Thus, we show evidence of magnetic order in Cr-doped InN.
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