Abstract
IV-VI diluted magnetic semiconductor Ge1−xCrxTe films were grown on BaF2 substrates by molecular-beam epitaxy. The Ge1−xCrxTe film up to x=0.103 is single phase as determined by reflection high-energy electron diffraction and x-ray diffraction measurements. The optical band gap decreases with increasing Cr composition. Ferromagnetic order of the Ge1−xCrxTe films is characterized by direct magnetization and anomalous Hall effect measurements.
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