Abstract
We have studied by XPS the growth of thin metal films on silicon at room temperature. The following metals were studied: Cu, Ag, Pt, and Au. These systems are of current interest for technological applications. The growth structure and interdiffusion of thin metallic layers into silicon is very difficult to determine by conventional surface analysis. We have therefore applied a new formalism, developed by Tougaard et al., in the form of the commercially available software package QUASES™ for quantitative analysis of surface nanostructures by XPS. As deposited we find island formation for Cu, Pt, and Au. For Ag a Stranski-Krastanov growth mechanism is identified.
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