Abstract
Silicon-Germanium (SiGe) single crystal is a fully miscible solid solution with diamond-base, and has attracted keen interest as material for applications such as microelectronic and optoelectronic devices. Consequently, there is a need for SiGe crystals of low dislocation density and large dimensions. In this study, the growth mechanism and methods of SiGe bulk single crystal were described and the PMCZ method made by ourselves was analyzed. The properties of PMCZ SiGe single crystal with different Ge concentrations were discussed. The result shows that the longitudinal distribution homogeneity of impurity Ge was improved on the effect of magnetic field; with Ge concentration creasing, oxygen concentration in SiGe crystals was decreased, and the crystals mechanical strength faded up; with Ge-doped increasing, there appears new absorption peak near 710cm-1and 800cm-1 wave number in Si FTIR absorption spectral graph. From the results, it can be found that with improving the growth technique and increasing Ge concentration, the quality of SiGe single crystal will be improved effectively.
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