Abstract
Cerium-modified Bi4Ti3O12 thin films were deposited on GaN substrates by the pulsed laser deposition method. The substrate temperature was varied from 600°C to 750°C in 50°C steps. The surface topographies and orientations of the Bi0.4Ce0.6Ti3O12 (BCeT) films were gradually changed in proportion to the substrate temperature. The diffusion reaction between BCeT and the GaN layer and the depth profiles of the films were investigated by Auger electron spectroscopy (AES). The ferroelectric properties and leakage current characteristics of the metal-ferroelectric-GaN stacked thin films were measured and discussed.
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