Growth and Fabrication of High‐Quality Single Nanowire Devices with Radial p‐i‐n Junctions

Yunyan Zhang,James A Gott,Huiyun Liu,H Aruni Fonseka,Dongyoung Kim,Ana M Sanchez,Suguo Huo,Jia Xu,Xingyou Chen,Haotian Zeng,Martin Aagesen,Tianyi Li,Giorgos Boras,Xuezhe Yu

doi:10.1002/smll.201803684

Abstract

Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. However, it is difficult to make high-quality core-shell NW devices, especially single NW devices. Here, the key factors during the growth and fabrication process that influence the quality of single core-shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example. By p-doping and annealing, good ohmic contact is achieved on NWs with a diameter as small as 50-60 nm. Single NW photovoltaics are subsequently developed and a record fill factor of 80.5% is shown. These results bring valuable information for making single NW devices, which can further benefit the development of high-density integration circuits.

Highlights

Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency
The key factors during the growth and fabrication process that influence the quality of single core–shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example
The electromagnetic modes of the horizontal NWs tend to be leaky and the NW photovoltaics are subsequently developed and a record fill factor of 80.5% is leaky-mode resonances can induce field shown. These results bring valuable information for making single NW devices, enhancements inside nanostructures to which can further benefit the development of high-density integration circuits

Summary

Introduction

Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. The key factors during the growth and fabrication process that influence the quality of single core–shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example.

Results

Conclusion