Abstract
Ultrathin (<50 nm) zirconium oxide (ZrO2) films are being intensively studied as high-k dielectrics for future metal-oxide-semiconductor (MOS) technology. In this paper, ultrathin ZrO2 films are deposited on silicon substrates by spin on deposition technique and annealed at 700 °C for different duration. The phase formation and morphological study have been performed by x-ray diffraction and scanning electron microscopy, respectively. Electrical properties of the films are investigated. The threshold voltages of the MOS structure were found to vary from −1.5 V to −2.5 V as the annealing time increases. The dielectric constants of the films are found to be 7.2–7.67 at 1 KHz. Leakage current of the films is found to increase with the annealing time. The dielectric breakdown field of the film is found to be 6.29–8.15 MV/cm.
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