Abstract
In this study, several polymorphs of Mo-Te (2H-MoTe2, 1T’-MoTe2, and Mo3Te4) single crystals are successfully grown. Mo3Te4 crystals are grown for the first time. The growth mechanism of 2H-MoTe2 and 1T’-MoTe2 crystals is a two-dimensional layer-by-layer mode, whereas that of Mo3Te4 crystals is a three-dimensional mode. The temperature-dependent resistivity of 1T’-MoTe2 and Mo3Te4 follows the metallic behavior, and their magnetoresistance (MR) is dependent on the square of the magnetic field. And the MR behavior of Mo3Te4 follows the Kohler's law (<50 K), strongly suggesting Mo3Te4 is a simple metal. Different from above two compounds, 2H-MoTe2 exhibits a semiconductor-like resistivity-temperature relationship and a large linear MR. The scale relationship between large mobility and MR suggests that the linear MR originates from disorder effects. The resistivity-temperature behaviors of as-grown crystals are in line with the first-principles calculations. This study reveals the rich structural and electrical properties of the Mo-Te system.
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