Abstract
Herein, we report a type II InAs/GaSb superlattice structure (SLS) grown on GaSb(100) substrates by molecular beam epitaxy (MBE) and its electrical characterization for mid-wavelength infrared detection. A GaSb buffer layer was grown under optimized SLS growth conditions, which can decrease the occurrence of defects for similar pyramidal structures. The complications associated with these conditions include oxide desorption of the substrate, growth temperature of the SLS, the V/III ratio during superlattice growth and the shutter sequence. High-resolution X-ray diffraction (HRXRD) shows the sixth satellite peak, and the period of the SLS was 52.9Å. The atomic force microscopy (AFM) images indicated that the roughness was less than 2.8nm. High-resolution transmission electron microscopy (HRTEM) images indicated that the SLS contains few structural defects related to interface dislocations or strain relaxation during the growth of the superlattice layer. The photoresponse spectra indicated that the cutoff wavelength was 4.8μm at 300K. The SLS photodiode surface was passivated by a zinc sulfide (ZnS) coating after anodic sulfide.
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