Growth and doping of GaAs and AlGaAs layers by low-temperature liquid-phase epitaxy

Abstract

This paper reports on growth and doping experiment of GaAs and AlGaAs layers fabricated by low-temperature liquid-phase epitaxy (LPE). We demonstrate precise layer composition and thickness controllability for the low-temperature LPE growth. The investigations on the doping of the layers show that the suitable dopants for practical use are Zn, Ge and Mg for p-type, and Sn, Te for n-type doping. We describe the successful growth of Al 0.28Ga 0.72As/GaAs single quantum well (SQW) structures, analysed by photoluminescence measurements. Our results indicate that LPE growth in low-temperature variant allows to obtain SQW structures with abrupt well/barrier heterointerfaces and fluctuation in the well thickness within a few monolayers.