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Abstract
Thin films of Y 2O 3 have been deposited by r.f.-magnetron sputtering onto 100 mm diameter n-type single crystal Si wafers. The growth conditions are discussed including an optical interferometric technique for in-situ thickness monitoring. The dielectric properties of films deposited at 60 °C, 100 °C and 190 °C are measured, with optimum values of the relative dielectric constant and breakdown strength determined as ϵ r = 16 and E bd = 3.85 MV cm -1 respectively. Deposition was uniform with respect to film thickness over 50 cm 2 (±5%), and the refractive index of the Y 2O 3 was determined as n = 1.911
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