Abstract
Polycrystalline materials were synthesized by liquid-phase reaction method and several excellent Nd:GdVO 4 crystals with different concentrations of Nd were successfully grown by the Czochralski method with strict growth control. It is found that the effective segregation coefficient of Nd ion in Nd:GdVO 4 crystal decreases with the increase of Nd concentration at the same pulling rate and rotation rate. The defects in Nd:GdVO 4 crystals were investigated by metallurgical microscope and chemical etching. The etch figures on (1 0 0) (0 1 0) (0 0 1) planes were observed. Rectangular-shaped etch pits on the (1 0 0) and (0 1 0) planes were found but those found on the (0 0 1) plane were square. The main defects found were dislocations, sub-grain boundaries, step faceting, inclusions, color centers, scattering and methods of reducing them have also been discussed.
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