Abstract
Large Sc-substituted barium hexaferrite crystals were grown by submerged-seeded solution growth (SSSG) and top-seeded solution growth (TSSG) techniques using various seed orientations. The influence of the seed position and seed orientation on the defect formation was studied in detail. Growth defects like inclusions, growth striations, growth sector boundaries, and growth-induced dislocations have been observed at cleaved and polished crystal surfaces by DIC microscopy after selective wet-etching. X-ray topography studies show these defects in more detail. It was found that the seeding process results in the formation of inclusions, which are nucleation centres of growth-induced dislocations. The application of small seed crystals with [2−1−10] and [01−10] seed orientation enables the dislocations, generated by the inclusion, to “grow out” at the side faces of the bulk crystal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
