Abstract
We report on metal-organic vapor phase epitaxial growth of (112¯2) InN on (112¯2) GaN templates on m-plane (101¯0) sapphire substrates. The in-plane relationship of the (112¯2) InN samples is [1¯1¯23]InN||[0001]sapphire and [11¯00]InN||[12¯10]sapphire, replicating the in-plane relationship of the (112¯2) GaN templates. The surface of the (112¯2) InN samples and the (112¯2) GaN templates shows an undulation along [11¯00]InN,GaN, which is attributed to anisotropic diffusion of indium/gallium atoms on the (112¯2) surfaces. The growth rate of the (112¯2) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (112¯2) InN layers and the (112¯2) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (112¯2) GaN templates but they were terminated at the InN/(112¯2) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (112¯2) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (112¯2) InN sample, indicating an In-polar (112¯2) InN. The valence band maximum was determined to be at (1.7 ± 0.1) eV for the (112¯2) InN sample, comparable to In-polar c-plane InN.
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