Abstract
The epitaxial growth of GeSn alloys with Sn content varying from 4 to 11% using digermanium (Ge2H6) and tin chloride (SnCl4) as precursors in a modified Chemical Vapor Deposition (CVD) system under reduced pressure condition is reported. Characterization results consisting of atomic force microscope (AFM), secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD), etching pits density (EPD) measurements, raman analysis, ellipsometry analysis and high-resolution transmission electron microscopy (HRTEM) are presented to examine the quality of the epitaxial GeSn films. High quality GeSn film with Sn content as high as 11% has been achieved and can be further optimized for various MIR applications.
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