Growth and characterization of yttrium oxide films by reactive magnetron sputtering

Abstract

Yttrium oxide (Y 2O 3) is a promising ceramic material for electronic and optical applications due to its excellent properties. The purpose of this study is to characterize the effects of deposition parameters on the structure and composition of Y 2O 3 films. The films are grown on Si substrates by reactive magnetron sputtering at different substrate temperatures and oxygen pressures. The composition and structure of the films are studied by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. It is shown that the Y 2O 3 films deposited by reactive magnetron sputtering are mainly cubic phase and polycrystalline. The films are composed of Y–O, Y–O–Si, and Si–O bonds. Increasing substrate temperature induces the monoclinic to cubic phase transition and results in the formation of oxygen vacancies in the film. The preferred growth orientation of Y 2O 3 film is the (110) plane at low temperature, and it changes to the (111) plane at high temperature. The low temperature is preferable for the formation of Y–O bonds. The oxygen pressure influences on the concentration of Y–O bonds significantly. An optimal oxygen partial pressure for the formation of Y–O bonds exists during the film deposition. In addition, the deposited Y 2O 3 films exhibit excellent mechanical properties.