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Abstract
Thulium‐doped yttrium oxide thin films were grown on amorphous quartz and indium‐tin oxide glass substrates employing an electron‐beam evaporation technique. Structural characterization was carried out at various substrate and annealing temperatures. was evaluated as a blue‐emitting phosphor for field emission display based on its cathode‐luminescent spectra, chromaticity, and brightness at low‐voltage excitation (<5 keV). Sharp emission was observed from thulium at 454 nm. The cathode luminance of the thin films was assessed with respect to substrates and annealing temperatures. The result shows that grown on indium‐tin oxide glass at 500°C followed with annealing at 800°C has better luminescent properties as compared to amorphous quartz. © 1999 The Electrochemical Society. All rights reserved.
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