Abstract
We have fabricated InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) grown on GaAs(311)A substrates by molecular beam epitaxy. High-quality crystals for VCSEL structures on (311)A having flat and smooth heterointerfaces were obtained by optimizing the growth conditions. It was experimentally demonstrated that the optical anisotropic gain of (311)-oriented strained-layer quantum wells is effective for polarization control. A [*BAR*2*BAR*33] polarization mode is stable against the injection currents of 3 times the threshold. In addition, the threshold current density of 80 A/(cm2·well) is achieved for a device with a laser aperture as large as 25 µ m square, which is comparable to or even lower than that of (100)-oriented VCSELs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
