Abstract
Extremely flat GaP layers grown on a Si substrate thinner than the critical thickness were characterized by high resolution transmission electron microscopy (HRTEM) and spectroscopic ellipsometry (SE). The HRTEM micrograph shows that the interface roughness of 20 nm thick GaP on Si is 10–15 atomic layers. The SE measurement shows that the compressive stress of the GaP layer caused by the lattice mismatch decreases gradually with increasing the thickness, which means that the lattice relaxation of GaP occurs gradually with increasing the thickness.
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