Abstract
( Pb ) ( Zr 0.52 Ti 0.48 ) O 3 (PZT) films were fabricated on LaNiO3 (LNO)/In2O3 90%SnO210% (ITO) layered transparent electrodes on glass substrates using chemical solution deposition. The structural, electrical, and optical properties of semitransparent Pd/PZT/LNO/ITO and transparent ITO/LNO/PZT/LNO/ITO capacitors fabricated on glass substrates were studied. X-ray diffraction revealed an improved crystalline structure of PZT on ITO-buffered glass substrates by interposing a LNO layer between PZT and ITO. Atomic force microscopy showed a smoother surface topography for the LNO/ITO layered electrode on glass, as compared to that of the single ITO layer on glass. The remnant polarization (Pr) of the Pd/PZT/LNO/ITO/glass capacitors and transparent ITO/LNO/PZT/LNO/ITO/glass capacitors was estimated from P-E hysteresis loops. The Pd/PZT/LNO/ITO capacitors on glass revealed significant improvement in the Pr as compared to PZT film based capacitors with ITO electrodes only. Excellent optical transmittance was observed for the whole capacitor structure. The importance of a high performance transparent capacitor is that this structure may enable high efficiency transparent electronic devices such as solar energy storage, photovoltaic, and intelligent windows, among others.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
