Abstract
Zinc oxide thin films were grown on sapphire substrates by metal organic chemical vapor deposition technique. Single crystal films with flat and smooth surfaces were reproducibly obtained, with application of sample bias and O2 inductively coupled plasma (ICP). At the growth condition of 650°C, 400W ICP power, −94V bias voltage and O∕Zn ratio of 75, full width at half maximum values of room temperature photoluminescence and high-resolution x-ray diffraction were measured to be 126meV and 269arcsec, respectively. It was proposed that application of sample bias provided reactant ions with kinetic energy, which promoted formation of single crystalline films.
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