Abstract
We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.
Highlights
Recent years have seen a lot of experimental effort directed towards integrating photonics with electronics
Recent experiments have focused on the investigation of GeSn and SiGeSn alloys that could potentially be used as direct bandgap Group-IV-materials for an efficient on-chip integration of photonics and electronics
We find that even highly strained SiGeSn-MQW-layers can be grown on virtual substrate (VS) with a defect density that is sufficiently low to permit opto-electronic device operation
Summary
Recent years have seen a lot of experimental effort directed towards integrating photonics with electronics. Recent experiments have focused on the investigation of GeSn and SiGeSn alloys that could potentially be used as direct bandgap Group-IV-materials for an efficient on-chip integration of photonics and electronics. A number of proposals concerning photonic devices such as light-emitting diodes or modulators with MultiQuantum-Well (MQW) structures in their active regions have been made [14, 15]. For those devices additional advantages such as a lower intensity of Auger processes have been predicted [16]. We compare our result with theoretical predictions from band structure calculations
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