Abstract
GaSbAlSb, InAsAlSb and InAsInP0.69Sb0.31 multi-quantum well structures were grown successfully by metalorganic vapor phase epitaxy. The good structural and optical quality was characterized by a combination of Raman spectroscopy and X-ray diffractometry. For the GaSbAlSb structures an unintentional incorporation of some percent Al in the GaSb well and of Ga in AlSb barrier layers was identified. At the interfaces of the material systems InAsAlSb and InAsInP0.69Sb0.31 our studies revealed the existence of InAsSb layers, which are explained in terms of the surfactant effect of Sb. The thickness and composition of these interlayers depend strongly on the InAs growth rate.
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