Abstract
We have studied and optimized conditions for spontaneous flux growth of RMgB5O10 (R = Y, La, Gd) crystals and assessed the feasibility of seeded growth of such crystals. Using high-temperature solution growth with K2Mo3O10 as a solvent, we have prepared optical-quality (Er,Yb):YMgB5O10 single crystals and measured their thermal conductivity and optical characteristics to assess their potential for use in diode-pumped lasers operating in the spectral range 1.5–1.6 μm. Absorption cross section spectra of an (Er,Yb):YMgB5O10 single crystal have been measured in the spectral ranges 800–1100 and 1400–1650 nm. The results demonstrate that (Er,Yb):YMgB5O10 single crystals are similar in characteristics to (Er,Yb):YAl3(BO3)4, promising for use in advanced near-IR laser systems, and are capable of replacing RAl3(BO3)4 materials in such devices because they are simpler to grow.
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