Abstract
We study the growth and properties of the quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; the Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy. Reflection high-energy electron diffraction patterns, scanning transmission electron microscopy lattice images, and x-ray diffraction spectra indicate that the (In0.94−x,Gax,Fe0.06)Sb layers have a zinc blende crystal structure without any other second phase. The lattice constant of the (In0.94−x,Gax,Fe0.06)Sb films changes linearly with the Ga concentration x, indicating that Ga atoms substitute In atoms in the zinc-blende structure. We found that the carrier type of (In0.94−x,Gax,Fe0.06)Sb can be systematically controlled by varying x, being n-type when x ≤ 10% and p-type when x ≥ 20%. Characterization studies using magnetic circular dichroism spectroscopy indicate that the (In0.94−x,Gax,Fe0.06)Sb layers have intrinsic ferromagnetism with relatively high Curie temperatures (TC = 40–120 K). The ability to widely control the fundamental material properties (lattice constant, bandgap, carrier type, and magnetic property) of (In0.94−x,Gax,Fe0.06)Sb demonstrated in this work is essential for spintronic device applications.
Highlights
Among the Fe-doped III–V Ferromagnetic semiconductors (FMSs), (Ga,Fe)Sb and (In,Fe)Sb are the two most interesting materials: While (Ga,Fe)Sb is of p-type and has perpendicular magnetic anisotropy,21–23 (In,Fe)Sb is of n-type and has in-plane magnetic anisotropy.20 Both of them, exhibit room-temperature ferromagnetism when being doped with a high enough Fe concentration (>15%)
We study the growth and properties of the quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; the Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy
Reflection high-energy electron diffraction patterns, scanning transmission electron microscopy lattice images, and x-ray diffraction spectra indicate that the (In0.94−x,Gax,Fe0.06)Sb layers have a zinc blende crystal structure without any other second phase
Summary
Among the Fe-doped III–V FMSs, (Ga,Fe)Sb and (In,Fe)Sb are the two most interesting materials: While (Ga,Fe)Sb is of p-type and has perpendicular magnetic anisotropy,21–23 (In,Fe)Sb is of n-type and has in-plane magnetic anisotropy.20 Both of them, exhibit room-temperature ferromagnetism when being doped with a high enough Fe concentration (>15%). We study the growth and properties of the quaternary-alloy ferromagnetic semiconductor (In0.94−x,Gax,Fe0.06)Sb (x = 5%–30%; the Fe concentration is fixed at 6%) grown by low-temperature molecular beam epitaxy.
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