Abstract
In the present work we have grown CuAlSe2 thin films on the fluorine doped tin oxide glass substrates by using Pulse electrodeposition technique. Thin films of CuAlSe2 were co-deposited from an aqueous solution containing CuCl2, AlCl3 and SeO2 adjusted to pH=1.60. Ethylenediamine-di-hydrochloride was used as a complexing agent and films were deposited at the constant deposition potential of −650 mV using pulses of frequency 50 Hz.CuAlSe2 thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Energy dispersive analysis of X-rays (EDAX) which indicate the good and reliable quality of the films. An interesting results of this work is that complexing agent plays an important role in reducing the grain size, thus all deposits were found to be in the range of 10-20 nm.
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