Abstract
We report for the first time on the growth of high-quality tensile-strained InAlGaAs InGaAsP multi-quantum wells on InP as well as bulk InAlGaAsP and InAlGaAsP InGaAsP multi-quantum wells on InP by LP-MOVPE. These structures show very good X-ray rocking curves and photoluminescence spectra and can be an interesting alternative for commonly used InGaAsP InGaAsP and InAlGaAs InAlGaAs structures.
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