Abstract
Heteroepitaxial P-doped ZnTe films with precisely controlled carrier concentrations ranging from 1.2 × 10 16 to 4 × 10 17 cm -3 through the regulation of P-beam pressure were successfully grown on GaAs by means of MBE. The crystallinity of the P-doped films and the activation efficiency of incorporated P-impurities were strongly affected by beam pressure ratios of Te/Zn beams (BPRs). In the Te rich case, where two-dimensional growth was dominant, a high quality film was grown and an efficient carrier activation from shallow P-acceptors took place together with dominant excitonic PL emission. In the Zn rich case, where three-dimensional growth occured, the quality of the grown film was degraded, so that an uncontrollable carrier concentration was confirmed with the existence of a strong deep PL emission. However, from SIMS analysis, the concentration of P-impurities incorporated in both films was controllable by P-beam pressure; BPRs were not as well-defined a parameter for governing the concentration of P-impurities as the P-beam pressure.
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