Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE**Supported by the Youth Innovation Promotion Association of Chinese Academy of Sciences under Grant No 2015094, the National Natural Science Foundation of China under Grant Nos 61204012, 61274049 and 61376058, the Beijing Natural Science Foundation under Grant Nos 4142053 and 4132070, and the Beijing Nova

Abstract

We report the growth of InSb layers directly on GaAs (001) substrates without any buffer layers by molecular beam epitaxy (MBE). Influences of growth temperature and V/III flux ratios on the crystal quality, the surface morphology and the electrical properties of InSb thin films are investigated. The InSb samples with room-temperature mobility of 44600 cm/Vs are grown under optimized growth conditions. The effect of defects in InSb epitaxial on the electrical properties is researched, and we infer that the formation of In vacancy (V) and Sb anti-site (Sb defects is the main reason for concentrations changing with growth temperature and Sb/In flux ratios. The mobility of the InSb sample as a function of temperature ranging from 90 K to 360 K is demonstrated and the dislocation scattering mechanism and phonon scattering mechanism are discussed.