Growth and Characterization of InGaN/GaN Heterostructures Using Plasma-Assisted Molecular Beam Epitaxy

Abstract

Structural and optical properties of In0.2Ga0.8N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated as a function of rf plasma power. Indium incorporation resulted in the higher rf power level suppressing 3D island growth with reduced introduction of defects in In0.2Ga0 8N in comparison with GaN. Sharp morphology at interfaces and strong transitions in photoluminescence reveal the optimum rf power around 400 W in our experimental set up for the growth of In0.2Ga0.8N/GaN heterostructures. Our experimental observations suggest that the presence of indium on surface modulates the rate of plasma stimulated desorption and diffusion, and reduces the formation of damaged subsurface.