Abstract
In this paper, high crystal quality InAs, GaAs and InGaAs nanowires were grown by chemical vapor deposition in a double temperature zone tubular furnace by accurately controlling the source material and substrate temperature. Scanning electron microscopy (SEM) showed that the nanowires had uniform diameter, smooth surface and length up to tens of microns. XRD results showed that the nanowires were evenly distributed in composition and have a single crystal wurtzite structure. Raman spectral images further verified the crystal structure and composition of the nanowires. They showed that high-quality InGaAs nanowires were grown. The photodetector has good spectral response characteristics and sensitive sensing ability to rapidly changing optical signals.
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