Abstract
Indium bismuthide is a well-known III-V group semi metallic compound. The compositions used were InBi0.95Te0.05 and InBi0.90Te0.10 crystals. The zone melting method used to grow the crystals. The zone-melting furnace has shown a temperature gradient of 45 °C/cm, and it has yielded the good quality crystals obtained, having a growth rate of 0.3 cm/h. The characterization of crystals was carried out using powdered X-ray technique. Using the FTIR spectra, the direct type band gap has been evaluated. The thermoelectric power measurement was carried out for InBi0.95Te0.05 and InBi0.90Te0.10 crystals. The Van der Pauw method has been employed for the Hall measurements at room temperature. This work report the detailed results of the above mentioned study and conclusions drawn therein.
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