Abstract
AbstractA set of InxAl1‐xN films lattice‐matched (LM) to GaN/sapphire substrates were grown by molecular beam epitaxy (MBE) and studied using X‐ray diffraction and transmission electron microscopy with the aim of implementing barrier and channels in high electron mobility transistors (HEMTs). Although all InAlN epilayers grow pseudomorphic to GaN, two sublayers with different compositions formed when a direct deposition onto the bare GaN buffer was carried out. On the other hand, heterostructures having single‐layered In∼0.18Al∼0.82N are achieved when a spacer consisting of an AlN interlayer or an AlN/GaN/AlN stack is placed between the InAlN and the buffer. These spacers not only yield a better compositional and structural homogeneity of the InAlN, but also improve electrical properties with respect to HEMT applications. Compared to one single AlN interlayer, the use of a triple AlN/GaN/AlN multilayer further improves the structural quality of the InAlN film (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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