Abstract
ABSTRACTHigh levels (≃ 1018cm-3) of oxygen were introduced into GaAs by using dimethyl aluminum methoxide (DMAlM0) as an oxygen-bearing precursor during metalorganic vapor phase epitaxy. Layers co-doped with oxygen and intentionally added silicon, both to concentrations of ≃ 1018 cm-3, were depleted of free carriers and had no measurable luminescence. Deep levels were present in layers grown with lower oxygen incorporation, but the compensation mechanism due to oxygen incorporation is not apparently tied to a specific defect level. The material with the electronic deep levels also possessed deep luminescence energy lines. All layers exhibited excellent surface morphology. For comparison, other layers were grown by introducing low levels of 02 and trimethyl aluminum during GaAs growth. The surface morphology of these layers was usually hazy and the layers did not exhibit the same well defined electrical and optical characteristics as the layers grown with DMAlMO.
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