Abstract
Nonpolar (1120) a-plane InGaN/GaN single quantum well (SQW) structure has been grown using a multi buffer layer on a (1102) r-plane sapphire substrate. The effects on the lattice constants of the a-plane GaN template caused by reactor pressure and V/III ratio of the first buffer layer were studied to improve the crystal quality. Under optimum growth conditions, the full widths at half maximum (FWHMs) of (1120) X-ray rocking curves along the c- and m-axis orientations were 430 and 530 arcsec, respectively. The optical characteristics of the nonpolar InGaN SQW determined from excitation-power-dependent photoluminescence and temperature-dependent photoluminescence spectra showed the absence of the quantum-confined Stark effect.
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