Growth and characterization of GaSb epilayers by liquid phase epitaxy

Abstract

GaSb epilayers were grown on (100) GaSb substrates by the supercooling technique of liquid phase epitaxy at very low temperature, 364° C. The surface morphology, growth rate and quality of the grown layers have been studied with SEM, X-ray, AES, EDS and PL measurements. The diffusion coefficient of antimony in the liquid gallium and slope of the liquidus curve were obtained as 7.1 × 10−5 cm2 sec−1 and 1400° C per at.fr. respectively. These values are different from all those previously reported. PL spectra for different growth conditions were also studied and compared with other data.