Abstract
Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at. % have been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor deposition system. Using a specialized growth approach intrinsic, p-type, and n-type alloys have been demonstrated. Material and optical characterization of these alloys indicate that the alloys are of high crystal quality in which the Sn is fully substitutional. Heterostructures of doped Ge/Ge1-xSnx/Ge have also grown to demonstrate their application in light emitting and detecting devices. Phosphorus doped Ge1-xSnx photoluminescence has also been observed at wavelengths up to 2.4 μm. Growth, materials and optical properties of these materials will be discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
