Growth and characterization of epitaxial films based on semimagnetic Pb1−xEuxTe solid solutions on various substrates

Abstract

This paper presents the results of a study of the growth and structure properties of Pb[Formula: see text]EuxTe, ([Formula: see text]) epitaxial films with 0.5–1[Formula: see text][Formula: see text]m thickness, grown on BaF2 and SiO2 substrates oriented in the (111) direction, by the molecular beam condensation method in a vacuum of 10[Formula: see text] Pa with the use of an additional compensating source of Te vapor during the growth process. The optimal conditions for obtaining structurally perfect ([Formula: see text]–100[Formula: see text]) epitaxial films were established: [Formula: see text]–623[Formula: see text]K; [Formula: see text]K; [Formula: see text]–9 Å/s. It was determined that conductivity inversion occurs at the temperature of the compensating source 410[Formula: see text]K.