Abstract
Fe0.8Ga0.2 films were deposited on bulk single-crystal (001) 0.69PMN-0.31PT substrates by DC magnetron sputtering to make magnetoelectric bilayer composites. Films deposited at temperatures below 600°C were X-ray amorphous. Films deposited at temperatures of 600°C and higher exhibited a single-crystal (001) disordered BCC structure. The crystalline FeGa films demonstrate a 45° twisted cube-on-cube epitaxial relationship with the PMN–PT substrates. Heterostructures with an X-ray amorphous FeGa film exhibited zero magnetoelectric response. Heterostructures with a 990nm epitaxial FeGa film exhibited a large inverse magnetoelectric voltage coefficient of 13.4(Gcm)/V.
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