Abstract
We have synthesized and characterized epitaxial and stoichiometric Ba(Zn 1/3Ta 2/3)O 3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn 1/3Ta 2/3)O 3 films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn–Ta B-site ordering was not observed in the Ba(Zn 1/3Ta 2/3)O 3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn 1/3Ta 2/3)O 3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm –1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.
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