Abstract

Cu2SnS3, a potential absorber layer for thin film heterojunction solar cells was successfully deposited onto soda lime glass substrates by spray pyrolysis technique at a substrate temperature of 360°C. The films were analyzed by studying their structural, compositional, morphological, optical and electrical properties. XRD studies revealed that the films are crystallized in tetragonal structure (14m). The lattice parameters were found to be a=5.414A and c=10.763A. From EDS analysis the films were found to be non-stoichiometric with Cu-rich and S-deficient composition. The direct optical band gap of the films was found to be 1.42 eV. Room temperature electrical resistivity was found to be 3.4×10−3 Ω-cm.

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