Abstract
Nanocrystalline copper clusters embedded in silicon carbide were made by island growth during sputter deposition. The distribution and morphology of metal clusters were observed by high-resolution transmission electron microscopy. To investigate chemical bonding at the copper–silicon carbide interface, we studied the electronic states of copper and silicon using X-ray photoelectron spectroscopy (XPS). It was found that the formation of copper silicide was suppressed in this system and that small shifts in binding energy were observed for different sizes of clusters, which was different from the chemical shift for copper silicide formation.
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