Abstract
Compositionally graded, relaxed, n-type, Si1-xGex alloy layers have been grown on (100) Si substrates; the main emphasis has been put on compositions with x = 0.25. It is found that for substrate growth-temperatures higher than similar 750°C and a grading rate of 10% Ge/μm relaxed Si0.75Ge0.25 epitaxial layers of high structural, optical, and electrical quality can be grown. The layers are characterized by channeling parameters close to expected bulk values, a threading dislocation density of similar 5 × 105 cm−2, and strong near-band gap luminescence. Electrical measurements have revealed Hall mobilities similar to published bulk values and concentrations of electrically active deep levels ⩽2 × 1011 cm−3. The surface morphology is, however, strongly influenced by the grading procedure which produces a high degree of cross-hatching.
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