Growth and Characterization of CIS Thin Films Prepared by Ion Beam Sputtering Deposition

Abstract

Copper indium diselenide (CuInSe2) thin films were prepared by ion beam sputtering Cu, In and Se targets continuously on BK7 glass substrates and the three-layer film was then annealed in the same vacuum chamber. X-ray diffraction shows that the CuInSe2 thin films have a single chalcopyrite structure with preferential (112) orientation. Scanning electron microscopy reveals that the CIS thin films consist of uniform and densely packed grain clusters. Energy dispersive x-ray spectroscopy demonstrates that the elemental composition of CIS films approaches the stochiometric composition ratios of 1:1:2. Raman measurement shows that the main peak is at about 174 cm−1 and this peak is identified as the A1 vibrational mode from chalcopyrite ordered CuInSe2. Optical transmission and absorption spectroscopy measurement reveal an energy band gap of about 1.05eV and an absorption coefficient of 105 cm−1. The film resistivity is about 0.01 Ωcm.