Abstract
ZnTe-CdTe superlattices with periods ranging from 13 Å to 38 Å were grown by atomic layer epitaxy on (001) GaAs substrates and monitored in situ by reflected high-energy electron diffraction. The substrate temperature was varied from 215°C to 300°C. The superlattices were characterized by high-resolution X-ray diffraction and the growth rate per reaction cycle was determined from the separation of satellite peaks. Between 270 and 290°C, the growth rate maintained itself at exactly 0.5 monolayers per cycle, allowing the growth of precisely tailored structures. As the substrate temperature was reduced below 270°C, the growth rate increased to approximately 0.8 monolayers per cycle, but it did not reach 1 monolayer per cycle before polycrystalline ZnTe was nucleated at 205°C.
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